rev.2.00 sep 07, 2005 page 1 of 6 2SK2225 silicon n channel mos fet rej03g1005-0200 (previous: ade-208-140) rev.2.00 sep 07, 2005 application high speed power switching features ? high breakdown voltage (v dss = 1500 v) ? high speed switching ? low drive current ? no secondary breakdown ? suitable for switching regulator, dc-dc converter outline renesas package code: prss0003za-a (package name: to-3pfm) 1. gate 2. drain 3. source 1 2 3 d g s
2SK2225 rev.2.00 sep 07, 2005 page 2 of 6 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss 20 v drain current i d 2 a drain peak current i d(pulse) * 1 7 a body to drain diode reverse drain current i dr 2 a channel dissipation pch* 2 50 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25 c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 1500 ? ? v i d = 10 ma, v gs = 0 gate to source leak current i gss ? ? 1 a v gs = 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 500 a v ds =1200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 ? 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) ? 9 12 ? i d = 1 a, v gs = 15 v* 3 forward transfer admittance |y fs | 0.45 0.75 ? s i d = 1 a, v ds = 20 v* 3 input capacitance ciss ? 990 ? pf output capacitance coss ? 125 ? pf reverse transfer capacitance crss ? 60 ? pf v ds = 10 v, v gs = 0, f = 1 mhz turn-on delay time t d(on) ? 17 ? ns rise time t r ? 50 ? ns turn-off delay time t d(off) ? 150 ? ns fall time t f ? 50 ? ns i d = 1 a, v gs = 10 v, r l = 30 ? body to drain diode forward voltage v df ? 0.9 ? v i f = 2 a, v gs = 0 body to drain diode reverse recovery time t rr ? 1750 ? ns i f = 20 a, v gs = 0, di f / dt = 100 a / s note: 3. pulse test
2SK2225 rev.2.00 sep 07, 2005 page 3 of 6 main characteristics case temperature t c ( c) channel dissipation pch (w) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) typical output characteristics drain current i d (a) gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) drain to source saturation voltage vs. gate to source voltage drain current i d (a) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. drain current 80 60 40 20 0 50 100 150 200 10 3 1 0.3 0.1 0.03 0.01 10 30 100 300 1000 3000 1000 0 1 ms operation in this area is limited by r ds(on) ta = 25 c 100 s 10 s pw = 10 m s (1s hot) dc ope ration (tc = 25 c) 5 4 3 2 1 0 20 40 60 80 100 15 v 10 v 7 v 6 v 5 v pulse test v gs = 4 v 8 v 2.0 1.6 1.2 0.8 0.4 0 tc = 75 c 25 c ?25 c v ds = 25 v pulse test 246810 50 40 30 20 10 0 4 8 12 16 20 2 a 1 a i d = 3 a 0.5 a pulse test 0.1 50 20 10 2 5 1 0.5 0.2 0.5 1 2 5 10 v gs = 10 v 15 v pulse test
2SK2225 rev.2.00 sep 07, 2005 page 4 of 6 case temperature t c ( c) static drain to source on state resistance r ds (on) ( ? ) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance ? y fs ? (s) forward transfer admittance vs. drain current reverse drain current i dr (a) reverse recovery time t rr (ns) body to drain diode reverse recovery time drain to source voltage v ds (v) capacitance c (pf) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics gate to source voltage v gs (v) drain current i d (a) switching time t (ns) switching characteristics 20 16 12 8 4 ?40 0 40 80 120 160 0 0.5 a, 1 a i d = 2 a v gs = 15 v pulse test 10 2 5 1 0.2 0.5 0.1 0.05 0.1 0.2 0.5 1 2 5 tc = ?25 c 25 c 75 c v ds = 25 v pulse test 5000 2000 1000 200 500 100 50 0.05 0.1 0.2 0.5 1 2 5 di / dt = 100 a / s, ta = 25 c v gs = 0, pulse test 10000 1000 100 10 0 ciss coss crss v gs = 0 f = 1 mhz 10 20 30 40 50 1000 800 600 400 200 0 20 16 12 8 4 0 20 40 60 80 100 v dd = 250 v 400 v 600 v v dd = 250 v 400 v 600 v i d = 2.5 a v gs v ds 1000 200 500 100 20 10 50 0.05 0.1 0.2 0.5 1 2 5 t f t r t d(on) t d(off) v gs = 10 v pw = 2 s duty < 1 %
2SK2225 rev.2.00 sep 07, 2005 page 5 of 6 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width switching time test circuit waveforms 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 pulse test v gs = 0, ?5 v 10 v, 15 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 dm p pw t d = pw t ch ? c(t) = s (t) ch ? c ch ? c = 2.50 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse vin monitor d.u.t. vin 10 v r l v dd = 30 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 50 ? 90% 10% t f
2SK2225 rev.2.00 sep 07, 2005 page 6 of 6 package dimensions 0.66 15.6 0.3 5.5 0.3 3.2 0.3 5.45 0.5 4.0 0.3 5.0 0.3 2.7 0.3 19.9 0.3 21.0 0.5 1.6 0.86 3.2 + 0.4 ? 0.2 2.6 0.86 5.45 0.5 5.0 0.3 + 0.2 ? 0.1 2.0 0.3 0.9 + 0.2 ? 0.1 package name prss0003za-a to-3pfm / to-3pfmv mass[typ.] 5.2g sc-93 renesas code jeita package code unit: mm ordering information part name quantity shipping container 2SK2225-e 360 pcs box (tube) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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